Samsung Launch its DRAM memory portfolio by bringing a 512GB DDR5 module based on high-k metal gate (HKMG) process technology.
The new memory module is design to fulfil the requirements in compute-hungry, high-bandwidth workloads in the fields of supercomputing, artificial intelligence (AI), and machine learning (ML).
Samsung said that its DDR5 DRAM is capable of delivering more than twice the performance of existing DDR4 modules with up to 7,200 megabits/second (Mbps) data transfer rate.
Samsung’s preference of going with the HKMG technology for the insulation layer of the new memory module is to reduce power consumption by 13 percent over DDR4 modules.
The new material will be able to reduce the current leakage and help the module reach new performance levels.
Samsung first use the HKMG process while designing its GDDR6 memory in 2018.
Its adoption on the new module is aim to attract data centres and enterprise customers who are looking for high-speed memory to process AI, ML, and data analytics operations.
The DDR5 DRAM by Samsung stakes eight layers of 16Gb DRAM chips using through-silicon via (TSV) technology to provide 512GB of capacity.
Samsung sampling different variations of the DDR5 module to different memory demands over time.
Samsung’s DDR5 DRAM module is currently in the testing phase
It is said to arrive for market by late 2021.
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